Abstract— Emerging non-volatile memories are becoming increasingly attractive for embedded and storage-class applications. Among the development challenges of Back-End integrated memory cells are long learning cycle and high wafer cost. We propose a short-flow based characterization of Memory Arrays using a Cross Point Array approach. A detail analysis of design requirements and testability confirms feasibility of the short-flow based solution to reduce Turn-Around Time and development costs.
Keywords — Emerging Memories, Cross Point, Memory Arrays, Cell Characterization, MRAM, PCRAM, DFM